Abstract:
This paper presents the first implementation of 100- nm-wide nanofluidics in a 65-nm CMOS chip using a one- step wet-etch to remove the copper routing from the back- end-of-line (BEOL) while maintaining transistor integrity through continuous monitoring of the IDS-VGS characteristics. Vertical fluidics are also successfully demonstrated by etching through 360 nm × 360 nm-sized vias. A non-destructive laser microscopy technique for imaging fluidic channels at a dimension below the visible- light wavelength is developed.
Keywords: CMOS, subtractive nanofluidics, microfluidics, BEOL etching, vertical fluidics, laser microscopy
b2026p0002
Publication date:
January 25, 2026
Publication type:
Conference Paper (Proceedings)
Citation:
M. S. Ladabaum, A. Di, J. M. Bao, G. Tikhomirov and J. -C. Chien, "CMOS-Embedded Microfluidics for Channel-Addressable Parallel Readout of Spad Fluorescence Lifetime Sensors," 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems (MEMS), Salzburg, Austria, 2026, pp. 1563-1566, doi: 10.1109/MEMS64181.2026.11419596. keywords: {Multiplexing;Semiconductor device measurement;Quantum dots;Fluorescence;Routing;Sensors;Biosensors;Microfluidics;Standards;Single-photon avalanche diodes;CMOS;SPAD;Fluorescence lifetime;TCSPC;Subtractive microfluidics;Lab-on-Chip;Biosensor}