Color centers in solid-state materials are promising candidates as single-photon emitters for quantum information technologies. For color centers in silicon, ion implantation and subsequent annealing are used to create emitters in wafers at a desired density. However, ion implantation introduces damage and additional defects into the silicon lattice, potentially impacting charge environments local to color centers. In this project, we focus on the creation of silicon T centers, which are point defects composed of two carbon atoms, and one hydrogen atom. We propose to use epitaxially grown carbon delta doped layers on SOI wafers to replace the ion implantation step and minimize damage. By controlling the carbon concentration, layer thickness, and annealing conditions, we will systematically study the creation conditions of T centers in delta doped wafers. Successful development of a robust recipe for T centers may provide a framework for creating other emitters with the same strategy. Furthermore, we plan to analyze and compare T center optical properties, such as spectral diffusion, between delta-doped and ion-implanted samples. These studies will offer further insights into creating highly coherent, single-photon emitters with indistinguishable photons for scalable quantum computation.
Project is currently funded by: Federal