2D materials are promising candidates for the rapidly scaled, high-performing devices due to their atomically thin nature. However, achieving high-performance Transition Metal Dichalcogenide (TMD) devices is often limited by a fundamental challenge: creating robust, low resistance contacts. Here, we introduce a highly adhesive and effective p-type contact for monolayer TMDs. Our findings demonstrate increased adhesion force between interlayer-TMD and interlayer-SiO2 surfaces, improved chemical stability, and a twofold reduction in total resistance compared to devices with conventional Ti adhesion layers.
Project is currently funded by: Federal