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BPN614: HEaTS: 4H-SiC FET Technology for Harsh Environment Sensing Applications

Project ID BPN614
Website
Start Date Wed 2011-Feb-02 01:33:06
Last Updated Tue 2013-Aug-20 11:31:36
Abstract The goal of this research is developing a wireless, multichip sensing module for addressing the inefficiencies in energy use. By doing so, power systems can be advanced by integration of electronics (communication, signal processing, microactuator control, etc.) to be operated at high temperature. Silicon carbide (SiC) has become the candidate for harsh environment sensing technology because its wide bandgap (3.2 eV), excellent chemical stability, high breakdown electric field strength (3-5 MV/cm), and high saturated electron drift velocity (2E7 cm/s). The goal of my research project is to develop matched differential pair amplifiers using either 4H-SiC junction field effect transistors (JFETs) or 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs)and integrated with MEMS-based silicon carbide (SiC) TAPS (Temperature, Acceleration, Pressure and Strain) sensors for extreme harsh environment applications.
Status Continuing
Funding Source Industry
IAB Research Area Physical Sensors & Devices
Researcher(s) Wei-Cheng Lien
Advisor(s) Albert P. Pisano
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